Tamura : β-Ga2O3 information is updated (New company video added)

Characteristics of β-Ga₂O₃
β-Ga₂O₃ is a new semiconductor material for power devices and has larger band-gap energy than SiC and GaN. Therefore, it will likely be used to make that can withstand high voltages and low resistance semiconductors. In addition, since growing β-Ga₂O₃ single crystal form a melt it is possible to provide high quality substrates with low cost compared with SiC and GaN to the market.

■Relationship between theoretical on-resistance and breakdown voltage

■Reasons for low cost of β-Ga₂O₃

SiC, GaN	β-Ga2O3
Growth rate	Slow	Fast
Substrate process	Difficult	Easy
Growth method	Vapor growth method	Melt growth method