BluGlass Limited has successfully demonstrated working tunnel junction laser diodes in a world-first proof-of-concept using its proprietary remote plasma chemical vapour deposition (RPCVD) technology. The novel laser diode prototypes leverage BluGlass' unique RPCVD tunnel junction technology, developed over many years for use in high-power products including laser diodes and high-brightness LEDs. Designed to enable higher power and more efficient lasers for use in commercial applications such as 3D printing and industrial welding, these RPCVD tunnel junction laser diode prototypes have demonstrated good lasing behaviour. This milestone helps confirm the potential of the RPCVD laser diode designs to address the critical performance requirements for high value gallium nitride (GaN) laser diode applications. GaN laser diode applications in the industry are currently limited by optical and resistive loss in the magnesium-containing layers (the p-type layers) which leads to low conversion efficiencies, typically in the 40-45% range compared to the close to 90% in GaN-based LEDs. Almost 50% of the power consumed when operating GaN laser diodes is lost in the form of heat due to the highly resistive p-type layers, traditionally needed to create the electrical circuit in a laser diode.